On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• density of defects in the form of grain boundaries. It holds an advantage over graphene in easily achieving wafer-scale growth with controlled thickness. In this study, we explore the piezoresistivity in thin films of nanocrystalline graphite. Simultaneous measurements of sheet resistance and externally

• , which was constructed in-house and automated using Python. Then, sheet resistance measurements under externally applied strain are discussed. Raman spectroscopy of the NCG under strain is studied, which gives insights into the distribution of strain in the film. Utilizing electrical and optical

• properties, a mechanism for piezoresistance in NCG is proposed. The work included here is a part of the PhD thesis completed by the first author S. Kumar [23]. Results and Discussion The two-point bending fixture, which was constructed to impart external strain and simultaneously perform sheet resistance

Design, fabrication, and characterization of kinetic-inductive force sensors for scanning probe applications

• August K. Roos,
• Ermes Scarano,
• Elisabet K. Arvidsson,
• Erik Holmgren and
• David B. Haviland

Beilstein J. Nanotechnol. 2024, 15, 242–255, doi:10.3762/bjnano.15.23

• less than the London penetration depth to the normal-state sheet resistance R□ and the superconducting energy gap Δ0. For a conductor of length ℓ and width w, the kinetic inductance is where Lk,□ is the kinetic inductance per square. From Equation 4, we require a superconducting film with large normal

• simulation and experiment. Electrical mode From the measured normal-state resistance of our nanowires and the measured thickness and width, we find a sheet resistance R□ = 243 Ω/□, corresponding to a resistivity of ρn = 365 μΩ cm. We monitor the microwave response during cool-down and estimate a critical

Electrical and optical enhancement of ITO/Mo bilayer thin films via laser annealing

• Abdelbaki Hacini,
• Ahmad Hadi Ali,
• Nurul Nadia Adnan and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2022, 13, 1589–1595, doi:10.3762/bjnano.13.133

• boundaries lead to a decrease in resistivity. Moreover, the annealing treatment minimizes the trade-off between transparency and conductivity [9]. The sheet resistance of the ITO/Mo films can be expressed as [29]: where Rs is the sheet resistance, ρ is the resistivity, and t is the thickness (=135 nm). The

• lowest sheet resistance value obtained is 128.14 Ω/sq from the sample annealed with 120 mJ, as shown in Figure 7. The sheet resistance has the same trend as the resistivity. Moreover, the optoelectronic properties of the IM films are better compared to the ones fabricated in the work of Ali et al. [32

• ] who used ITO/Ag and ITO/Ni bilayers. The figure of merit (FOM) is a quantitative value that can evaluate the performance of the device. From the sheet resistance (Rs) and the optical transmittance (T), the quality of the thin film can be calculated using the FOM relation in Equation 5 [33][34][35]: It

Near-infrared photoactive Ag-Zn-Ga-S-Se quantum dots for high-performance quantum dot-sensitized solar cells

• Roopakala Kottayi,
• Ilangovan Veerappan and
• Ramadasse Sittaramane

Beilstein J. Nanotechnol. 2022, 13, 1337–1344, doi:10.3762/bjnano.13.110

• ) that appears at the interface of electrolyte and counter electrode. The low-frequency region hemisphere is attributed to the charge transfer resistance (R2) appearing at the interface of electrolyte and photoanode. The sheet resistance (Rs) is the resistance of the intercept of the real axis. Similarly

Reliable fabrication of transparent conducting films by cascade centrifugation and Langmuir–Blodgett deposition of electrochemically exfoliated graphene

• Teodora Vićentić,
• Stevan Andrić,
• Vladimir Rajić and
• Marko Spasenović

Beilstein J. Nanotechnol. 2022, 13, 666–674, doi:10.3762/bjnano.13.58

• sheet resistance RS obey the following equation: where Z0 is the impedance of free space, σop is the optical conductivity, and σdc,B is the bulk dc conductivity of the film. For film thicknesses below the percolation threshold, the transmittance and sheet resistance obey the following equation: where Π

Selected properties of Al_xZn_yO thin films prepared by reactive pulsed magnetron sputtering using a two-element Zn/Al target

• Witold Posadowski,
• Artur Wiatrowski,
• Jarosław Domaradzki and
• Michał Mazur

Beilstein J. Nanotechnol. 2022, 13, 344–354, doi:10.3762/bjnano.13.29

• = 400 W, which corresponded to a power density on the target surface of approximately 5 W/cm2. The films were deposited on glass strip substrates, placed symmetrically over the target, making it possible to obtain films with different composition and thickness. The film sheet resistance was measured as

• Table 1. The sheet resistance of the deposited thin films was determined using a standard four-point probe head (Jandel Engineering Ltd.) and a source-measure unit (Keithley 2611A type). The measuring head was equipped with four tungsten carbide needles, which were arranged in line with a needle-to

• lowest sheet resistance, approximately 100 Ω/sq, was measured in the area close to the edge of the target. A tremendous change in the film sheet resistance, of about nine orders of magnitude, appears in the area close to the edge of the target. The opposite result was observed for the surface resistance

Assessment of the optical and electrical properties of light-emitting diodes containing carbon-based nanostructures and plasmonic nanoparticles: a review

• Keshav Nagpal,
• Erwan Rauwel,
• Frédérique Ducroquet and
• Protima Rauwel

Beilstein J. Nanotechnol. 2021, 12, 1078–1092, doi:10.3762/bjnano.12.80

• transmittance (>80% in the visible region) and low sheet resistance (≈20 Ω/sq). Typically, ITO consists of 90% In2O3 and 10% SnO2 by weight. Kim et al. have grown ITO on glass substrates with varying Sn concentrations [35]. Although ITO is a conventional favorite current-spreading layer, it nevertheless suffers

• of ITO. Furthermore, a decrease in sheet resistance (from 500 to 30 Ω) when Ag nanowires are added to graphene increases the ability of graphene to function as a current-spreading layer [43]. Equivalent to Ag, SPR of AuNP can also be applied to the anode in order to enhance the overall EL of the LED

• decrease in the forward voltage and an increase in the optical power (≈10%) also indicated a reduced sheet resistance. In addition, AlGaInP LED emanating red emissions in the range of 560–650 nm are boosted via SPR of AuNP by varying the AuNP size as explained above. Table 3 provides a list of various LED

High-yield synthesis of silver nanowires for transparent conducting PET films

• Gul Naz,
• Hafsa Asghar,
• Muhammad Ramzan,
• Muhammad Arshad,
• Rashid Ahmed,
• Muhammad Bilal Tahir,
• Bakhtiar Ul Haq,
• Nadeem Baig and
• Junaid Jalil

Beilstein J. Nanotechnol. 2021, 12, 624–632, doi:10.3762/bjnano.12.51

• flexibility after the ink coating. The maximum transmittance value of as-prepared PET films in the visible region was estimated to be about 92.5% with a sheet resistance value of ca. 20 Ω/sq. This makes the films a potential substitute to commonly used expensive indium tin oxide (ITO) in the field of flexible

• optoelectronics. Keywords: silver nanowires; high yield; visible luminescence; PET film; transmittance; sheet resistance; Introduction Several optoelectronic devices, such as solar cells, touch screens, LC displays, organic EL panels, light-emitting diodes, and organic light emitting diodes, use transparent

• electrodes made of sputtered indium tin oxide (ITO) films [1][2][3]. These films are widely used because of their high transmittance, low sheet resistance, and high electrical conductivity. Yet, they still have some major drawbacks such as high cost, intrinsic brittleness due to the ceramic nature [4], and

A stretchable triboelectric nanogenerator made of silver-coated glass microspheres for human motion energy harvesting and self-powered sensing applications

• Hui Li,
• Yaju Zhang,
• Yonghui Wu,
• Hui Zhao,
• Weichao Wang,
• Xu He and
• Haiwu Zheng

Beilstein J. Nanotechnol. 2021, 12, 402–412, doi:10.3762/bjnano.12.32

• between sheet resistance and tensile strain have different shapes, the resistance value before and after stretching is of the same order, exhibiting the excellent flexibility and mechanical robustness of the S-TENG. Applications of S-TENG Charging performance and monitoring human motion The electrical

• LabVIEW programs to record information. The sheet resistance of the flexible SCGM/silicone rubber electrode was measured using the M-3 Mini four-probe tester. SEM (JSM-7001F) was used for morphology characterization of the surface of the SCGMs. Conclusion In summary, an easily manufactured, inexpensive

• load resistances. The maximum power is 308 μW under an external load resistance of 2 MΩ. (e) Photograph of the custom-made resistance test platform. (f) Sheet resistance under tensile strain from 0 to 300%. Optical image of the power supplied by padding the S-TENG with the hand for (a) a calculator and

Paper-based triboelectric nanogenerators and their applications: a review

• Jing Han,
• Nuo Xu,
• Yuchen Liang,
• Mei Ding,
• Junyi Zhai,
• Qijun Sun and
• Zhong Lin Wang

Beilstein J. Nanotechnol. 2021, 12, 151–171, doi:10.3762/bjnano.12.12

• AgNWs-casted conductive paper electrode [125]. The prepared AgNWs/CNF paper is flexible enough to be repeatedly folded and unfolded. When the number of folding/unfolding cycles increases, the sheet resistance of the AgNWs/CNF paper increases only a little, which demonstrates its superior durability and

A review on the green and sustainable synthesis of silver nanoparticles and one-dimensional silver nanostructures

• Sina Kaabipour and
• Shohreh Hemmati

Beilstein J. Nanotechnol. 2021, 12, 102–136, doi:10.3762/bjnano.12.9

• in sheet resistance and to increase touch sensitivity [89]. Furthermore, AgNWs can be used to prepare AgNW-based conductive inks that have remarkable rheological characteristics such as thixotropic shear thinning and thus, can be simply used for screen printing without the addition of polymeric

Structural optical and electrical properties of a transparent conductive ITO/Al–Ag/ITO multilayer contact

• Aliyu Kabiru Isiyaku,
• Ahmad Hadi Ali and
• Nafarizal Nayan

Beilstein J. Nanotechnol. 2020, 11, 695–702, doi:10.3762/bjnano.11.57

• transmittance (86.1%) with a very low sheet resistance of 2.93 Ω/sq. The carrier concentration increased more than twice when the Al–Ag layer was inserted between the ITO layers. The figure of merit of the IAAI multilayer contact has been found to be high at 76.4 × 10−3 Ω−1 compared to a pure ITO contact (69.4

• 200 °C [29]. Rapid thermal annealing of ITO/Ag/ITO films by Joeng et al. [28] led to an improvement in transmittance for films annealed at 300 °C. The lowest sheet resistance and resistivity values were obtained after annealing at 500 °C, but with reduced optical transmittance. Also, a durability test

• carrier concentration in the ITO film is responsible for the blue shift and this can be clearly explained by the Burstein–Moss shift model [9][38]. Electrical properties of IAAI and ITO films obtained from four-point probe and Hall effect measurements are given in Table 2. Sheet resistance and resistivity

Mobility of charge carriers in self-assembled monolayers

• Zhihua Fu,
• Tatjana Ladnorg,
• Hartmut Gliemann,
• Alexander Welle,
• Asif Bashir,
• Michael Rohwerder,
• Qiang Zhang,
• Björn Schüpbach,
• Andreas Terfort and
• Christof Wöll

Beilstein J. Nanotechnol. 2019, 10, 2449–2458, doi:10.3762/bjnano.10.235

• performance of field effect transistor devices using pentacene as organic semiconductor [33]. In that work, the increase in performance was attributed to the reduced sheet resistance for charge transport in the anthracenethiol monolayer supporting the pentacene multilayer. In order to study the I–V

Polyvinylpyrrolidone as additive for perovskite solar cells with water and isopropanol as solvents

• Chen Du,
• Shuo Wang,
• Xu Miao,
• Wenhai Sun,
• Yu Zhu,
• Chengyan Wang and
• Ruixin Ma

Beilstein J. Nanotechnol. 2019, 10, 2374–2382, doi:10.3762/bjnano.10.228

• purchased from Alfa Aesar. Methylammonium iodide (MAI), methylammonium chloride (MACl) and Spiro-OMeTAD were purchased from Xi’an Polymer Light Technology Corp. ITO glasses with a sheet resistance of 8 Ω/sq were also purchased from Xi’an Polymer Light Technology Corp. All chemicals were used as recieved

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• 20 keV. Oxidation and annealing were carried out in dry ambient at 850 °C for 90 min, resulting in a sheet resistance RSH of 60 Ω/square. Before depositing the coating layers, the silicon wafer with nanowires on top was treated with diluted hydrofluoric acid, to remove the thin native oxide layer

Interaction of Te and Se interlayers with Ag or Au nanofilms in sandwich structures

• Arkadiusz Ciesielski,
• Lukasz Skowronski,
• Marek Trzcinski,
• Ewa Górecka,
• Wojciech Pacuski and
• Tomasz Szoplik

Beilstein J. Nanotechnol. 2019, 10, 238–246, doi:10.3762/bjnano.10.22

• films have a sheet resistance approximately twice higher than similar structures deposited on top of Ti or Ni sublayers. Ellipsometric and XPS measurements by Wróbel et al. [25] have shown that this increase in ohmic losses is most likely a result of Ge atoms segregating towards the surface of the

Zn/F-doped tin oxide nanoparticles synthesized by laser pyrolysis: structural and optical properties

• Florian Dumitrache,
• Iuliana P. Morjan,
• Elena Dutu,
• Ion Morjan,
• Claudiu Teodor Fleaca,
• Monica Scarisoreanu,
• Alina Ilie,
• Marius Dumitru,
• Cristian Mihailescu,
• Adriana Smarandache and
• Gabriel Prodan

Beilstein J. Nanotechnol. 2019, 10, 9–21, doi:10.3762/bjnano.10.2

• estimated 4.18 eV bandgap value [24]. Also, the 1 atom % Nd-doped FTO film obtained by spray pyrolysis at 500 °C presented the lowest sheet resistance and resistivity values, which was accompanied by a 4.15 eV bandgap – a value 4.21 eV lower than that of FTO obtained under similar conditions. Also, in this

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• -Aldrich, sheet resistance of 7 Ω/sq) and a glass microscope slide were used as substrates. These were cleaned using a sequence of isopropyl alcohol, acetone and distilled water using ultrasonication. Then, various thicknesses of Co films were deposited using a dc magnetron sputtering system (dc power ca

A scanning probe microscopy study of nanostructured TiO₂/poly(3-hexylthiophene) hybrid heterojunctions for photovoltaic applications

• Laurie Letertre,
• Roland Roche,
• Olivier Douhéret,
• Hailu G. Kassa,
• Denis Mariolle,
• Nicolas Chevalier,
• Łukasz Borowik,
• Philippe Dumas,
• Benjamin Grévin,
• Roberto Lazzaroni and
• Philippe Leclère

Beilstein J. Nanotechnol. 2018, 9, 2087–2096, doi:10.3762/bjnano.9.197

• bias, while fixing the growth temperature to 450 °C and the tilt angle between the substrate and the cathode axis to 60°. Anatase TiO2 layers with a 200 nm thick nanocolumnar morphology have been deposited on 85 nm-thick ITO-coated glass substrates (Naranjo B.V., sheet resistance of 15 Ω·sq). The

A variable probe pitch micro-Hall effect method

• Maria-Louise Witthøft,
• Frederik W. Østerberg,
• Janusz Bogdanowicz,
• Rong Lin,
• Henrik H. Henrichsen,
• Ole Hansen and
• Dirch H. Petersen

Beilstein J. Nanotechnol. 2018, 9, 2032–2039, doi:10.3762/bjnano.9.192

• characterization of ultrathin films with minimal sample preparation. Here, we study in detail how the analysis of raw measurement data affects the accuracy of extracted key sample parameters, i.e., how the standard deviation on sheet resistance, carrier mobility and Hall sheet carrier density is affected by the

• data analysis used. We compare two methods, based primarily on either the sheet resistance signals or the Hall resistance signals, by theoretically analysing the effects of electrode position errors and electrical noise on the standard deviations. We verify the findings with a set of experimental data

• measured on an ultrashallow junction silicon sample. We find that in presence of significant electrical noise, lower standard deviation is always obtained when the geometrical analysis is based on the sheet resistance signals. The situation is more complicated when electrode position errors are dominant

A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si_1−xGe_x and Si layers

• Richard Daubriac,
• Emmanuel Scheid,
• Hiba Rizk,
• Richard Monflier,
• Sylvain Joblot,
• Rémi Beneyton,
• Pablo Acosta Alba,
• Sébastien Kerdilès and
• Filadelfo Cristiano

Beilstein J. Nanotechnol. 2018, 9, 1926–1939, doi:10.3762/bjnano.9.184

• ultrathin layers The Hall effect measurement is a well-known technique that allows one to access three important physical parameters for material characterization: the sheet resistance Rs, the active Hall dose NH and the Hall mobility µH. At first, a Van der Pauw technique is used to determine the sheet

• ). A test structure in the form of a Greek cross has been chosen as it has more advantages than other shapes (Figure S4, Supporting Information File 1). First, it provides an error of less than 1% on both sheet resistance and Hall coefficient measurements [29][30][31][32]. Moreover, it has a highly

• Greek-cross structure while protecting the metallic contacts with the lowest impact on structure symmetry and measurement reproducibility. Electrical measurements were carried out with a HL5500PC Nanometrics Hall bench equipped with a 0.3 T magnet. For each investigated sample, the sheet resistance and

Electrical characterization of single nanometer-wide Si fins in dense arrays

• Steven Folkersma,
• Janusz Bogdanowicz,
• Andreas Schulze,
• Paola Favia,
• Dirch H. Petersen,
• Ole Hansen,
• Henrik H. Henrichsen,
• Peter F. Nielsen,
• Lior Shiv and
• Wilfried Vandervorst

Beilstein J. Nanotechnol. 2018, 9, 1863–1867, doi:10.3762/bjnano.9.178

• the technique, this opens the prospect for the use of μ4PP in electrical critical dimension metrology. Keywords: critical dimension metrology; electrical characterization; finFET; micro four-point probe; sheet resistance; Introduction The transition from planar to three-dimensional transistor

• architectures such as the fin field-effect transistor (finFET) [1] has raised the need for measuring the electrical properties of nanometer-wide conducting features [2]. Recently, it has been shown that the micro four-point probe (μ4pp) technique, which is commonly used for sheet resistance measurements on

• blanket materials or relatively large pads (larger than 80 × 80 µm2) [3][4][5], provides a solution to this requirement [6]. The μ4pp technique was demonstrated to provide (sheet) resistance measurements in single fins without the need for dedicated Kelvin resistor or transmission line structures [7

Formation and development of nanometer-sized cybotactic clusters in bent-core nematic liquid crystalline compounds

• Yuri P. Panarin,
• Sithara P. Sreenilayam,
• Jagdish K. Vij,
• Anne Lehmann and
• Carsten Tschierske

Beilstein J. Nanotechnol. 2018, 9, 1288–1296, doi:10.3762/bjnano.9.121

• GmbH, Germany). The sample cells for dielectric measurements are constructed from glass substrates coated with indium tin oxide (ITO) with low sheet resistance (20 Ω/ ). This shifts the parasitic dielectric peak to a higher frequency due to the capacitance of the cell in series with the finite

Beyond Moore’s technologies: operation principles of a superconductor alternative

• Igor I. Soloviev,
• Nikolay V. Klenov,
• Sergey V. Bakurskiy,
• Mikhail Yu. Kupriyanov,
• Alexander L. Gudkov and
• Anatoli S. Sidorenko

Beilstein J. Nanotechnol. 2017, 8, 2689–2710, doi:10.3762/bjnano.8.269

• wiring feature size [19][20] (ca. 0.5–1 μm), and the sheet resistance of the used material (2–6 Ω per square for Mo or MoNx) [19][20]. While the weak link area of the Josephson junction itself is typically a ≈ 1 μm2 for jc = 100 μA/μm2, its total area with the shunt is larger by an order of magnitude

The role of ligands in coinage-metal nanoparticles for electronics

• Ioannis Kanelidis and
• Tobias Kraus

Beilstein J. Nanotechnol. 2017, 8, 2625–2639, doi:10.3762/bjnano.8.263

• transparent, flexible conductors in many publications [76][77][78][79]. For example, silver nanowires capped by PVP provided layers of high transparency (90% transmission of the visible spectrum), excellent homogeneity, and low sheet resistance (Rs = 25 Ω/sq) in flexible electrodes [80]. 2 Ligands in